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dc.contributor.authorBrown, Richard Eric
dc.date.accessioned2014-03-04T22:00:49Z
dc.date.available2014-03-04T22:00:49Z
dc.date.issued2002-12
dc.identifier.otherbrown_richard_e_200212_ms
dc.identifier.urihttp://purl.galileo.usg.edu/uga_etd/brown_richard_e_200212_ms
dc.identifier.urihttp://hdl.handle.net/10724/29375
dc.description.abstractUsing spectral holes in Er doped Y2SiO2, stabilization of a semiconductor laser to 500 Hz at 1536 nm (i.e. 1 part in 2 10 14 ) has been recently achieved. However, the stabilization could be maintained only for a period of 2 ms, since the spectral holes utilized for stabilization were non-persistent. Gated hole burning could provide persistent holes and long-term stabilization, but due to the large bandgap of the single crystalline host materials used in the experiments, this type of spectral hole burning could not be realized. Reported here are studies of Er3+ doped As2S3, a chalcogenide glass with a bandgap of about 2 eV, to explore the potential of this material as a persistent hole burning medium for the stabilization of NIR lasers. Samples were prepared by stirring molten As2S3 doped with Er2S3 powder for 8 hours in a sealed quartz tube. Subsequent quenching of the melt produced the bulk glass. The optical properties the As2S3:Er3+ samples were analyzed using emission and absorption spectroscopy.
dc.languageAs2S3:Rr3+ : spectroscopy and spectral hole burning
dc.publisheruga
dc.rightspublic
dc.subjectSpectroscopy
dc.subjectHole Burning
dc.subjectGlass
dc.subjectChalcogenide
dc.titleAs2S3:Rr3+ : spectroscopy and spectral hole burning
dc.typeThesis
dc.description.degreeMS
dc.description.departmentPhysics and Astronomy
dc.description.majorPhysics
dc.description.advisorUwe Happek
dc.description.committeeUwe Happek
dc.description.committeeW. Gary Love
dc.description.committeeWilliam Dennis


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