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dc.contributor.authorThambidurai, Chandru
dc.date.accessioned2014-03-04T18:25:42Z
dc.date.available2014-03-04T18:25:42Z
dc.date.issued2009-12
dc.identifier.otherthambidurai_chandru_200912_phd
dc.identifier.urihttp://purl.galileo.usg.edu/uga_etd/thambidurai_chandru_200912_phd
dc.identifier.urihttp://hdl.handle.net/10724/26169
dc.description.abstractThe formation of metal nanofilms using Electrochemical ALD is discussed. Surface Limited Redox Reactions (SLRR) were used to form thin film deposits by ALD. The SLRR involves the underpotential deposition of an atomic layer of a less noble metal (sacrificial metal). This is then replaced in a solution of cations of the desired element, a more noble element. Lead was used as a sacrificial metal in the present studies. Cyclic Voltammetry was used to investigate the optimum deposition potential for Pb. An automated flow cell deposition system was employed to grow metal nano films. No Pb was present in the thin film was evident with electron probe microanalysis (EPMA). It was also shown that the Pb % in a deposit increased, as more negative Pb deposition potential were used. Deposits were characterized using X-ray diffraction (XRD), EPMA, scanning electron micrscopy (SEM), Atomic force microscopy and scanning tunneling microscopy (STM).
dc.languageeng
dc.publisheruga
dc.rightspublic
dc.subjectCopper
dc.subjectRuthenium
dc.subjectRuSe
dc.subjectSTM
dc.subjectEPMA
dc.subjectXRD
dc.subjectEQCM
dc.subjectAtomic Layer Deposition (ALD)
dc.subjectUnder Potential Deposition (UPD)
dc.subjectSurface Limited Redox Replacement Reaction (SLRRR).
dc.titleElectrodeposition of thin films by electrochemical - atomic layer deposition (ALD)
dc.typeDissertation
dc.description.degreePhD
dc.description.departmentChemistry
dc.description.majorChemistry
dc.description.advisorJohn Stickney
dc.description.committeeJohn Stickney
dc.description.committeeMarcus Lay
dc.description.committeeI. Jonathan Amster


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