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dc.contributor.authorTao, Xiuping
dc.date.accessioned2014-03-03T20:06:51Z
dc.date.available2014-03-03T20:06:51Z
dc.date.issued2001-12
dc.identifier.othertao_xiuping_200112_ms
dc.identifier.urihttp://purl.galileo.usg.edu/uga_etd/tao_xiuping_200112_ms
dc.identifier.urihttp://hdl.handle.net/10724/20458
dc.description.abstractUsing the kinetic Monte Carlo method, we simulate binary alloy thin film (A0.5B0.5) growth on L×L substrate with focus on the domain growth behavior. The substrate temperature is fixed at 0.5J/kB, and ferromagnetic-like lateral effective binding energies (JAA, JBB, JAB) = (1., 1., 0.2)J are used. We vary diffusion-flux ratio D/F from 10 to several hundreds for different substrate sizes. Two kinds of methods are used to measure the domain size: first zero of order parameter correlation function and average domain area. Both methods find that domain size saturates much quicker than that in the antiferromagnetic-like interaction case; the former finds that saturated domain sizes increase with D/F linearly for D/F no larger than 300, and the later finds that they are equal for different system sizes and increase with D/F monotonically. Both methods have difficulty in dealing with D/F over 300 due to the finite size effects.
dc.publisheruga
dc.rightsOn Campus Only
dc.subjectMonte Carlo
dc.subjectThin film
dc.subjectDomain growth
dc.subjectDiffusion-flux ratio
dc.subjectDomain size
dc.titleMonte carlo simulation of binary alloy thin film growth
dc.typeThesis
dc.description.degreeMS
dc.description.departmentPhysics and Astronomy
dc.description.majorPhysics
dc.description.advisorDavid P. Landau
dc.description.committeeDavid P. Landau
dc.description.committeeHeinz-Bernd Schuttler
dc.description.committeeSteven P. Lewis


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